FQB55N10 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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FQB55N10
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حجم فایل
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966.87
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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10
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مشخصات فنی
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Manufacturer:
ON Semiconductor
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Series:
QFET®
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
100V
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Current - Continuous Drain (Id) @ 25°C:
55A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
26mOhm @ 27.5A, 10V
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Vgs(th) (Max) @ Id:
4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
98nC @ 10V
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Vgs (Max):
±25V
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Input Capacitance (Ciss) (Max) @ Vds:
2730pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
3.75W (Ta), 155W (Tc)
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Operating Temperature:
-55°C ~ 175°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
D²PAK (TO-263AB)
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Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Base Part Number:
FQB5
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detail:
N-Channel 100V 55A (Tc) 3.75W (Ta), 155W (Tc) Surface Mount D²PAK (TO-263AB)
